any changing of specification will not be informed individual BFS20 npn silicon plastic-encapsulate transistor p o w e r d i s s i p a t i o n h i g h f e q u e n c y a p p l i c a t i o n . v h f b a n d a m p l i f i e r a p p l i c a t i o n r o h s c o m p l i a n t p r o d u c t pcm : 0.25 w collector current icm : 25ma collector-base voltage features collector 3 1 base 2 emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view http://www.secosgmbh.com elektronische bauelemente 1 2 v (br)cbo : 30 v operating & storage junction temperature t j , t stg : - 55 o c ~ + 150 o c 3 electrical cha r acteristics (t amb=25 unles s other w is e specifie d ) paramet e r symbol t est co nd itio n s min t yp m a x unit co llecto r -b ase b r eakd o w n v o lt ag e v (b r)cb o ic= 100 a, i e =0 30 v co llecto r -emitter b r ea kd o w n v o lt ag e v (b r)ce o ic= 100 a, i b =0 20 v emitter-b a s e b r eakd o w n v o lt ag e v ( br ) ebo i e = 100 a, i c =0 4 v co llecto r cu t-o ff cu rren t i cb o v cb = 20v , i e = 0 0.1 a co llecto r cu t-o ff cu rren t i ce o v ce = 15v , i b = 0 0.1 a co llecto r cu t-o ff cu rren t i ebo v eb =4 v , i c = 0 0.1 a dc cu rr en t g a in h fe v ce = 10v , i c = 7ma 40 120 co llecto r -emitter satu r atio n v o lt ag e v ce (sat) i c = 10 ma, i b = 1 ma 0.3 v base-emitter v o lt age v be (on) i c =7 ma, v ce = 1 0v 0.9 v t r a n s ition fre que nc y f t v ce = 10v , i c =5 ma f = 100mhz 275 mhz marking g1 1 01 -jun-2002 rev. a page 1 of 1 a suffix of "-c" specifies halogen & lead-free
|
